Inverse-computation design of a SiC bulk crystal growth system

Materials Research Society Symposium-Proceedings

Volumn 640, Issue , 2001, Pages

  Kulik, Alexey V ^a   Demina, Svetlana E ^a   Kochugucv, Sergey K ^a   Ofcngcim, Dmitry K ^a   Karpov, Sergey Y ^a   Vorob'ev, Andrey N ^a   Bogdanov, Maxim V ^a   Ramm, Mark S ^b   Zhmakin, Alexander I ^b   Alonso, Anna A ^c   Gurevich, Sergey G ^c   Makarov, Yuri N ^d  

^a SOFT IMPACT LTD   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Vologdin Institute of RF Currents   (Russian Federation)

^d Semiconductor Technology Research Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRUCIBLES; CRYSTAL GROWTH; INVERSE PROBLEMS; MATHEMATICAL MODELS; OPTIMIZATION; SUBLIMATION; TEMPERATURE DISTRIBUTION;

INVERSE COMPUTATION DESIGN; TEMPERATURE UNIFORMITY; THERMAL FIELD;

SILICON CARBIDE;

EID: 0034862145     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)