Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1061-1064

  Karakaya, K ^a   Barcones, B ^a   Rittersma, Z M ^b   van Berkum, J G M ^c   Verheijen, M A ^c   Rijnders, G ^a   Blank, D H A ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Electrical; Pulsed laser deposition (PLD)

Indexed keywords

CERIUM; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NANOLAMINATES; POST DEPOSITION ANNEAL (PDA); ROOM TEMPERATURES; SUBSTRATE TEMPERATURES;

PULSED LASER DEPOSITION;

EID: 33846075756     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.024     Document Type: Article

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