Electron effective mass and Si-donor binding energy in Ga As1-x Nx probed by a high magnetic field

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 12, 2008, Pages

  Allison, G ^a   Spasov, S ^a   Patane A ^a   Eaves, L ^a   Kozlova, N V ^b,c   Freudenberger, J ^b,c   Hopkinson, M ^d   Hill, G ^d  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IFW DRESDEN   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 41449098146     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.125210     Document Type: Article

References (33)

1. W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.1221 82, 1221 (1999).
2. See, for example, Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, London, 2004).
3. S. R. Bank, H. B. Yuen, H. Bae, M. A. Wistey, and J. S. Harris, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2208375 88, 221115 (2006).
4. D. J. Friedman and S. R. Kurtz, Prog. Photovoltaics PPHOED 1062-7995 10.1002/pip.430 10, 331 (2002).
5. A. Ignatov, A. Patanè, O. Makarovsky, and L. Eaves, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2164906 88, 032107 (2006).
6. F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.073201 73, 073201 (2006).
7. J. Endicott, A. Patanè, J. Ibanez, L. Eaves, M. Bissiri, M. Hopkinson, R. Airey, and G. Hill, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.126802 91, 126802 (2003).
8. A. Lindsay and E. P. O'Reilly, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.196402 93, 196402 (2004).
9. P. R. C. Kent and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.115208 64, 115208 (2001).
10. S. Fahy, A. Lindsay, H. Ouerdane, and E. P. O'Reilly, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.035203 74, 035203 (2006).
11. M. P. Vaughan and B. K. Ridley, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.75.195205 75, 195205 (2007).
12. J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1642760 84, 747 (2004).
13. J. Teubert, P. J. Klar, W. Heimbrodt, V. Gottschalch, A. Lindsay, and E. P. O'Reilly, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200672540 244, 431 (2007).
14. M. Reason, Y. Jin, H. A. McKay, N. Mangan, D. Mao, R. S. Goldman, X. Bai, and C. Kurdak, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2798629 102, 103710 (2007).
15. D. Fowler, O. Makarovsky, A. Patanè, L. Eaves, L. Geelhaar, and H. Riechert, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.153305 69, 153305 (2004).
16. For a review on magnetophonon resonance, see, for example, R. L. Peterson, Semiconductors and Semimetals (Academic, London, 1975), Vol. 10, p. 221;
17. C. Hamaguchi, Basic Semiconductor Physics (Springer, Berlin, 2001), p. 285.
18. J. Wu, W. Walukiewicz, and E. E. Haller, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1324999 89, 789 (2001).
19. D. Fowler, O. Makarovsky, A. Patanè, L. Eaves, L. Geelhaar, H. Reichert, and K. Uesugi, The 27th International Conference on the Physics of Semiconductors (ICPS-27), AIP Conf. Proc. No. 772 (AIP, Melville, NY, 2005), p. 497.
20. Semiconductor: Data Handbook, edited by, Otfried Madelung, (Springer, London, 2003).
21. G. Allison, S. Spasov, A. Patanè, L. Eaves, A. Ignatov, D. K. Maude, M. Hopkinson, and R. Airey, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.75.115325 75, 115325 (2007).
22. S. Spasov, G. Allison, A. Patanè, A. Ignatov, L. Eaves, D. K. Maude, M. Hopkinson, and R. Airey, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2794407 91, 142104 (2007).
23. L. Eaves, P. S. S. Guimaraes, J. C. Portal, T. P. Pearsall, and G. Hill, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.53.608 53, 608 (1984).
24. J. R. Barker, M. Mudares, B. R. Snell, P. S. S. Guimaraes, D. C. Taylor, L. Eaves, and G. Hill, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.96175 47, 387 (1985).
25. R. A. Stradling and R. A. Wood, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/1/6/330 1, 1711 (1968).
26. R. A. Stradling and R. A. Wood, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(68)90568-1 6, 701 (1968).
27. R. J. Nicholas and R. A. Stradling, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/9/7/016 9, 1253 (1976).
28. J. R. Barker, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/5/13/015 5, 1657 (1972).
29. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences Vol. 45 (Springer-Verlag, Berlin, 1984), p. 155.
30. T. O. Poehler, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.4.1223 4, 1223 (1971).
31. J. L. Robert, A. Raymond, L. Konczewicz, C. Bousquet, W. Zawadzki, F. Alexandre, I. M. Masson, J. P. Andre, and P. M. Frijlink, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.33.5935 33, 5935 (1986).
32. B. Jouault, A. Raymond, and W. Zawadzki, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.245210 65, 245210 (2002).
33. D. Cabib, E. Fabri, and G. Fiorio, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(71)90169-4 9, 1517 (1971).