Electrical conduction properties of Ga(AsN) layers

AIP Conference Proceedings

Volumn 772, Issue , 2005, Pages 497-498

  Fowler, D ^a   Makarovsky, O ^a   Patane A ^a   Eaves, L ^a   Geelhaar, L ^b   Reichert, H ^b   Uesugi, K ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749498433     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1994201     Document Type: Conference Paper

References (6)

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3. I. Suemune et al., Semicon.Sci Tech. 17 755 (2002).
4. D. Fowler et al., Phys. Rev. B 69 153 (2004).
5. K. M. Yu et al., Nature Materials 1, 185 (2002).
6. S. Fahy and E.P. O'Reilly, Appl. Phys. Lett. 83 3731 (2003).