Magnetic field tuning of hot electron resonant capture in a semiconductor device

Applied Physics Letters

Volumn 91, Issue 14, 2007, Pages

  Spasov, S ^a   Allison, G ^a   Patan A ^a   Ignatov, A ^a,d   Eaves, L ^a   Maude, D K ^b   Hopkinson, M ^c   Airey, R ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION ELECTRONS; MAGNETIC FIELD TUNING;

ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTRON RESONANCE; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS;

HOT ELECTRONS;

EID: 34948871122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794407     Document Type: Article

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