Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells

Progress in Photovoltaics: Research and Applications

Volumn 10, Issue 5, 2002, Pages 331-344

  Friedman, D J ^a   Kurtz, Sarah R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SOLAR CELLS;

BREAKEVEN CRITERIA; FOUR JUNCTION SOLAR CELLS; GALLIUM INDIUM NITROGEN ARSENIDE; GALLIUM INDIUM PHOSPHIDE;

HETEROJUNCTIONS;

EID: 0036681737     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.430     Document Type: Article

References (22)

1. Next-generation, high-efficiency III-V multijunction cells
2. 32.3%-Efficient triple-junction solar cells: The promise and challenge of their application in high-concentration-ratio PV systems
3. Solar cell efficiency tables (version 18)
4. Projected performance of three- and four-junction devices using GaAs and GaInP
5. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
6. 1-eV solar cells with GaInNAs active layer
7. Novel InGaAsN pn junction for high-efficiency multiple-junction solar cells
8. 1-eV GaInNAs solar cells for ultrahigh-efficiency multijunction devices
9. InGaAsN solar cells with 1.0-eV band-gap, lattice-matched to GaAs
10. Development of 1.25-eV InGaAsN for triple junction solar cells
11. Photocurrent of 1-eV GaInNAs lattice-matched to GaAs
12. Modeling of electron diffusion length in GaInAsN solar cells
13. Modelling of tandem cell temperature coefficients
14. 0.015 layer
15. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP
16. 0.5P grown by liquid-phase epitaxy
17. Semiconducting and other major properties of GaAs
18. Intrinsic optical absorption in single-crystal germanium and silicon at 77°K and 300°K
19. Optical functions
20. Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells
21. The development of Ge bottom cell for monolithic and stacked multi-junction applications
22. Outdoor meteorological broadband and spectral conditions for evaluating photovoltaic modules