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Volumn 23, Issue 3, 2008, Pages 790-797

Characterization of hydrogenated nanocrystalline silicon thin films prepared with various negative direct current biases

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; NANOCRYSTALLITES; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

EID: 41449083317     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0092     Document Type: Article
Times cited : (7)

References (30)
  • 1
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • L.T. Canham: Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046 (1990).
    • (1990) Appl. Phys. Lett , vol.57 , pp. 1046
    • Canham, L.T.1
  • 2
    • 0029304918 scopus 로고
    • High quantum efficiency for a porous silicon light emitting diode under pulsed operation
    • J. Linnors and N. Lalic: High quantum efficiency for a porous silicon light emitting diode under pulsed operation. Appl. Phys. Lett. 66, 3048 (1995).
    • (1995) Appl. Phys. Lett , vol.66 , pp. 3048
    • Linnors, J.1    Lalic, N.2
  • 3
    • 0000635576 scopus 로고    scopus 로고
    • Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode
    • B. Gelloz and N. Koshida: Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode. J. Appl. Phys. 88, 4319 (2000).
    • (2000) J. Appl. Phys , vol.88 , pp. 4319
    • Gelloz, B.1    Koshida, N.2
  • 4
    • 0001753504 scopus 로고    scopus 로고
    • The structural and luminescence properties of porous silicon
    • A.G. Cullis, L.T. Canham, and P.D.J. Calcott: The structural and luminescence properties of porous silicon. J. Appl. Phys. 82, 909 (1997).
    • (1997) J. Appl. Phys , vol.82 , pp. 909
    • Cullis, A.G.1    Canham, L.T.2    Calcott, P.D.J.3
  • 6
    • 36549098611 scopus 로고
    • In situ investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon films
    • A.M. Antoine, B. Drevillon, and P. Roca i Cabarrocas: In situ investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon films. J. Appl. Phys. 61, 2501 (1987).
    • (1987) J. Appl. Phys , vol.61 , pp. 2501
    • Antoine, A.M.1    Drevillon, B.2    Roca i Cabarrocas, P.3
  • 7
  • 8
    • 36549100807 scopus 로고
    • Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system
    • K. Köhler, J.W. Coburn, D.E. Horne, and E. Kay: Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system. J. Appl. Phys. 57, 59 (1985).
    • (1985) J. Appl. Phys , vol.57 , pp. 59
    • Köhler, K.1    Coburn, J.W.2    Horne, D.E.3    Kay, E.4
  • 9
    • 0015483966 scopus 로고
    • Positive-ion bombardment of substrates in rf diode glow discharge sputtering
    • J.W. Coburn and E. Kay: Positive-ion bombardment of substrates in rf diode glow discharge sputtering. J. Appl. Phys. 43, 4965 (1972).
    • (1972) J. Appl. Phys , vol.43 , pp. 4965
    • Coburn, J.W.1    Kay, E.2
  • 11
    • 20544457612 scopus 로고
    • Ion-surface interactions during thin film deposition
    • i
    • T. Takagi: Ion-surface interactions during thin film deposition. J. Vac. Sci. Technol. Ai], 2, 382 (1984).
    • (1984) J. Vac. Sci. Technol. A , vol.2 , pp. 382
    • Takagi, T.1
  • 12
    • 33646512181 scopus 로고    scopus 로고
    • Synchrotron x-ray reflectivity study of high-dielectric constant alumina thin films prepared by atomic layer deposition
    • Y.T. Hwang, K.Y. Heo, C.H. Chang, M.K. Joo, and M.H. Ree: Synchrotron x-ray reflectivity study of high-dielectric constant alumina thin films prepared by atomic layer deposition. Thin Solid Films 510, 159 (2006).
    • (2006) Thin Solid Films , vol.510 , pp. 159
    • Hwang, Y.T.1    Heo, K.Y.2    Chang, C.H.3    Joo, M.K.4    Ree, M.H.5
  • 14
    • 1842842921 scopus 로고    scopus 로고
    • Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H films
    • W. Wensheng, W. Tianmin, Z. Chunxi, L. Guohua, H. Hexiang, and D. Kun: Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H films. Vacuum 74, 69 (2004).
    • (2004) Vacuum , vol.74 , pp. 69
    • Wensheng, W.1    Tianmin, W.2    Chunxi, Z.3    Guohua, L.4    Hexiang, H.5    Kun, D.6
  • 15
    • 0019602990 scopus 로고
    • The one phonon Raman spectrum in microcrystalline silicon
    • H. Richter, Z.P. Wang, and L. Ley: The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun. 39, 625 (1981).
    • (1981) Solid State Commun , vol.39 , pp. 625
    • Richter, H.1    Wang, Z.P.2    Ley, L.3
  • 16
    • 0022733729 scopus 로고
    • The effects of microcrystal size and shape on the one-phonon Raman spectra of crystalline semiconductors
    • I.H. Campbell and P.M. Fauchet: The effects of microcrystal size and shape on the one-phonon Raman spectra of crystalline semiconductors. Solid State Commun. 58, 739 (1986).
    • (1986) Solid State Commun , vol.58 , pp. 739
    • Campbell, I.H.1    Fauchet, P.M.2
  • 17
    • 0001475378 scopus 로고
    • Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon
    • S. Veprek, F.A. Sarott, and Z. Iqbal: Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon. Phys. Rev. B 36, 3344 (1987).
    • (1987) Phys. Rev. B , vol.36 , pp. 3344
    • Veprek, S.1    Sarott, F.A.2    Iqbal, Z.3
  • 18
    • 36449000450 scopus 로고
    • The structure and properties of nanosize crystalline silicon films
    • Y. He, C. Yin, G. Cheng, L. Wang, X. Liu, and G.Y. Hu: The structure and properties of nanosize crystalline silicon films. J. Appl. Phys. 75, 797 (1994).
    • (1994) J. Appl. Phys , vol.75 , pp. 797
    • He, Y.1    Yin, C.2    Cheng, G.3    Wang, L.4    Liu, X.5    Hu, G.Y.6
  • 19
    • 0019927631 scopus 로고
    • A thermodynamic criterion of the crystalline-to-amorphous transition in silicon
    • S. Veprek, Z. Iqbal, and F.A. Sarott: A thermodynamic criterion of the crystalline-to-amorphous transition in silicon. Philos. Mag. B 45, 137 (1982).
    • (1982) Philos. Mag. B , vol.45 , pp. 137
    • Veprek, S.1    Iqbal, Z.2    Sarott, F.A.3
  • 20
    • 0000537041 scopus 로고    scopus 로고
    • In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing
    • R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto: In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing. J. Appl. Phys. 85, 1172 (1999).
    • (1999) J. Appl. Phys , vol.85 , pp. 1172
    • Nozawa, R.1    Takeda, H.2    Ito, M.3    Hori, M.4    Goto, T.5
  • 21
    • 17444371623 scopus 로고    scopus 로고
    • Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film
    • C-H. Cho, B-H. Kim, T-W. Kim, S-J. Park, N-M. Park, and G-Y. Sung: Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film. App. Phys. Lett. 86, 143107 (2005).
    • (2005) App. Phys. Lett , vol.86 , pp. 143107
    • Cho, C.-H.1    Kim, B.-H.2    Kim, T.-W.3    Park, S.-J.4    Park, N.-M.5    Sung, G.-Y.6
  • 22
    • 36549098278 scopus 로고
    • Hydrogen content of amorphous silicon films deposited in a multipole plasma
    • B. Drevillon and M. Toulemonde: Hydrogen content of amorphous silicon films deposited in a multipole plasma. J. Appl. Phys. 58, 535 (1985).
    • (1985) J. Appl. Phys , vol.58 , pp. 535
    • Drevillon, B.1    Toulemonde, M.2
  • 24
    • 33845223406 scopus 로고    scopus 로고
    • Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films
    • W. Weia, G. Xub, J. Wang, and T. Wang: Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films. Vacuum 81, 656 (2007).
    • (2007) Vacuum , vol.81 , pp. 656
    • Weia, W.1    Xub, G.2    Wang, J.3    Wang, T.4
  • 25
    • 38549174855 scopus 로고    scopus 로고
    • The effect of dc bias voltage on the structural and optical properties of hydrogenated nanocrystalline silicon thin films
    • J-H. Shim and N-H. Cho: The effect of dc bias voltage on the structural and optical properties of hydrogenated nanocrystalline silicon thin films. Solid State Phenom. 124-126, 1261 (2007).
    • (2007) Solid State Phenom , vol.124-126 , pp. 1261
    • Shim, J.-H.1    Cho, N.-H.2
  • 26
    • 0000709433 scopus 로고
    • Visible light emission due to quantum-size effects in highly porous crystalline silicon
    • A.G. Cullis and L.T. Canham: Visible light emission due to quantum-size effects in highly porous crystalline silicon. Nature 353, 335 (1991).
    • (1991) Nature , vol.353 , pp. 335
    • Cullis, A.G.1    Canham, L.T.2
  • 29
    • 0001388198 scopus 로고
    • Theory of the photoluminescence spectra of porous silicon
    • G.C. John and V.A. Singh: Theory of the photoluminescence spectra of porous silicon. Phys. Rev. B 50, 5329 (1994).
    • (1994) Phys. Rev. B , vol.50 , pp. 5329
    • John, G.C.1    Singh, V.A.2
  • 30
    • 0142198449 scopus 로고    scopus 로고
    • Anomalous temperature dependence of optical emission in visible-light-emitting amorphous silicon quantum dots
    • H-S. Kwack, Y. Sun, Y-H. Cho, N-M. Park, and S-J. Park: Anomalous temperature dependence of optical emission in visible-light-emitting amorphous silicon quantum dots. Appl. Phys. Lett. 83, 2901 (2003).
    • (2003) Appl. Phys. Lett , vol.83 , pp. 2901
    • Kwack, H.-S.1    Sun, Y.2    Cho, Y.-H.3    Park, N.-M.4    Park, S.-J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.