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Volumn , Issue , 2004, Pages 237-243
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Integration challenges of new materials and device architectures for IC applications
a a a a a a a a a a a a a a a a a a a a more.. |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
DIELECTRIC MATERIALS;
DIFFUSION;
ELECTRIC FIELDS;
ELECTRIC POTENTIAL;
EPITAXIAL GROWTH;
LEAKAGE CURRENTS;
MOSFET DEVICES;
THIN FILM DEVICES;
TRANSMISSION ELECTRON MICROSCOPY;
CAPACITOR EQUIVALENT THICKNESS (CET);
EQUIVALENT OXIDE THICKNESS (EOT);
SCANNING CAPACITANCE MICROSCOPY (SCM);
SHORT CHANNEL EFFECTS (SCE);
CMOS INTEGRATED CIRCUITS;
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EID: 4143148627
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (28)
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