High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Lin, H C ^a   Ye, P D ^a   Xuan, Y ^a   Lu, G ^b   Facchetti, A ^b   Marks, T J ^b  

^a Purdue University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE PROPERTIES; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT- TRANSISTORS (MISFETS); SELF-ASSEMBLED ORGANIC NANODIELECTRICS (SAND);

CURRENT DENSITY; FIELD EFFECT TRANSISTORS; INSULATING MATERIALS; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SURFACE CHEMISTRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33749479239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358202     Document Type: Article

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