Field emission enhancement of ZnO nanorod arrays with hafnium nitride coating

Surface and Coatings Technology

Volumn 202, Issue 15, 2008, Pages 3480-3484

  Yuan, Longyan ^a,b   Fang, Guojia ^a,b   Li, Chun ^a   Li, Jun ^a   Wang, Mingjun ^a   Liu, Nishuang ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Field emission; Hafnium nitride coating; ZnO nanorod arrays

Indexed keywords

CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTRIC FIELDS; FIELD EMISSION; MAGNETRON SPUTTERING; MORPHOLOGY; NANORODS; NITRIDES; REACTIVE SPUTTERING; ZINC OXIDE;

HAFNIUM NITRIDE COATING; REACTIVE DIRECT CURRENT MAGNETRON SPUTTERING;

INORGANIC COATINGS;

CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTRIC FIELDS; FIELD EMISSION; INORGANIC COATINGS; MAGNETRON SPUTTERING; MORPHOLOGY; NANORODS; NITRIDES; REACTIVE SPUTTERING; ZINC OXIDE;

EID: 41249090312     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.12.023     Document Type: Article

References (25)

1. Cui Y., Wei Q., Park H.K., and Lieber C.M. Science 293 (2001) 1289
2. De Heer W.A., Chatelain A., and Ugarte D. Science 270 (1995) 1179
3. Tan C.M., Jia J.J., and Yu W.B. Appl. Phys. Lett. 86 (2005) 263104
4. Huang M.H., Mao S., Feick H., Yan H.Q., Wu Y.Y., Kind H., Weber E., Russo R., and Yang P.D. Science 292 (2001) 1897
5. Zhao Q., Zhang H.Z., Zhu Y.W., Feng S.Q., Sun X.C., Xu J., and Yu D.P. Appl. Phys. Lett. 86 (2005) 203115
6. Fowler R.H., and Nordheim L. Proc. R. Soc. A. 119 (1928) 173
7. Wong W.K., Meng F.Y., Li Q., Au F.C.K., Bello I., and Lee S.T. Appl. Phys. Lett. 80 (2002) 877
8. She J.C., Xu N.S., Huq S.E., Deng S.Z., and Chen J. Appl. Phys. Lett. 81 (2002) 4257
9. Jin F., Liu Y., and Day C.M. Appl. Phys. Lett. 88 (2006) 163116
10. Jin F., Liu Y., and Day C.M. Appl. Phys. Lett. 90 (2007) 143114
11. Liao L., Li J.C., Wang D.F., Liu C., Liu C.S., Fu Q., and Fan L.X. Nanotechnology 16 (2005) 985
12. Fujii R., Gotoh Y., Liao M.Y., Tsuji H., and Ishikawa J. Vacuum 80 (2006) 832
13. Nagao M., Yasumuro C., Sacho Y., Tanoue H., Kanemaru S., and Itoh J. J. Vac. Sci. Technol., B 24 (2006) 936
14. Li C., Fang G.J., Fu Q., Su F.H., Li G.H., Wu X.G., and Zhao X.Z. J. Cryst. Growth 292 (2006) 19
15. Yuan L.Y., Fang G.J., Li C., Wang M.J., Liu N.S., Ai L., Cheng Y.Z., Gao H.M., and Zhao X.Z. Appl. Surf. Sci. 253 (2007) 8538
16. Wang Y.G., Lau S.P., Zhang X.H., Hng H.H., Lee H.W., Yu S.F., and Tay B.K. J. Cryst. Growth 259 (2003) 335
17. Matsumoto T., Kato H., Miyamoto K., Sano M., Zhukov E.A., and Yao T. Appl. Phys. Lett. 81 (2002) 1231
18. Ko H.J., Yao T., Chen Y.F., and Hong S.K. J. Appl. Phys. 92 (2002) 354
19. Koida T., Chichibu S.F., Uedone A., Tsukazaki A., Kawasaki M., Sota T., Segawa Y., and Koinuma H. Appl. Phys. Lett. 82 (2003) 532
20. Xu M., Wang S.Y., Yin G., Li J., Zheng Y., Chen L., and Jia Y. Appl. Phys. Lett. 89 (2006) 151908
21. Bai X.D., Wang E.G., Gao P.X., and Wang Z.L. Nano Lett. 3 (2003) 1147
22. Wei W., Jiang K., Wei Y., Liu P., Liu K., Zhang L., Li Q., and Fan S. Appl. Phys. Lett. 89 (2006) 203112
23. Fujii R., Gotoh Y., Liao M.Y., Tsuji H., and Ishikawa J. Vacuum 80 (2006) 832
24. Sonnenberg H. Appl. Phys. Lett. 14 (1969) 289
25. Ye C.H., Bando Y., Fang X., Shen G., and Golberg D. J. Phys. Chem. C 111 (2007) 12673