Field-emission properties of multihead silicon cone arrays coated with cesium

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 877-879

  Wong, W K ^a   Meng, F Y ^a   Li, Q ^a   Au, F C K ^a   Bello, I ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; CONE ARRAYS; CURRENT DECAY; EMISSION CURRENT DENSITY; FIELD ENHANCEMENT FACTOR; FIELD-EMISSION PROPERTIES; FOWLER-NORDHEIM PLOTS; STABILITY TESTS; THRESHOLD FIELDS; TURN-ON FIELD;

COATINGS; MONOLAYERS; SILICON;

CESIUM;

EID: 79955998791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1446990     Document Type: Article

References (19)

1. R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 683 (1928). prz PRLAAZ 0962-8444
2. W. Zhu, G. P. Kochanski, and S. Jin, Science 282, 1471 (1998). sci SCIEAS 0036-8075
3. W. Zhu, G. P. Kochanski, S. Jin, and L. Seibles, J. Appl. Phys. 78, 2707 (1995). jap JAPIAU 0021-8979
4. O. Gröning, O. M. Köttel, P. Gröning, and L. Schlapbach, Appl. Surf. Sci. 111, 135 (1997). asu ASUSEE 0169-4332
5. H. Kiyota, H. Araki, H. Kobayashi, T. Shiga, K. Kitaguchi, and M. Iida, Appl. Phys. Lett. 75, 2331 (1999). apl APPLAB 0003-6951
6. B. S. Satyanarayana, A. Hart, W. I. Milne, and J. Robertson, Appl. Phys. Lett. 71, 1431 (1997). apl APPLAB 0003-6951
7. X. Ding, Y. J. Li, Z. Sun, B. K. Tay, S. P. Lau, G. Y. Chen, W. Y. Cheung, and S. P. Wong, J. Appl. Phys. 88, 6842 (2000). jap JAPIAU 0021-8979
8. S. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. J. Dai, Science 283, 512 (1999). sci SCIEAS 0036-8075
9. A. M. Rao, D. Jacques, R. C. Haddon, W. Zhu, C. Bower, and S. Jin, Appl. Phys. Lett. 76, 3813 (2000). apl APPLAB 0003-6951
10. H. Murakami, M. Hirakawa, C. Tanaka, and H. Yamakawa, Appl. Phys. Lett. 76, 1776 (2000). apl APPLAB 0003-6951
11. S. Gupta, B. L. Weiss, B. R. Weiner, and G. Morell, J. Appl. Phys. 89, 5671 (2001). jap JAPIAU 0021-8979
12. J. B. Cui, J. Robertson, and W. I. Milne, J. Appl. Phys. 89, 5707 (2001). jap JAPIAU 0021-8979
13. C. C. Umbach, B. W. Weselak, J. M. Blakely, and Q. Shen, J. Vac. Sci. Technol. B 14, 3420 (1996). jvb JVTBD9 0734-211X
14. J. Itoh, Y. Nazuka, T. Inoue, H. Yokoyama, S. Kanemaru, and K. Shimizu, Jpn. J. Appl. Phys., Part 1 34, 6912 (1995). jjb JAPNDE 0021-4922
15. M. Nagao, Y. Gotoh, T. Ura, H. Tsuji, and J. Ishikawa, J. Vac. Sci. Technol. B 17, 623 (1999). jvb JVTBD9 0734-211X
16. K. Matsumoto, S. Kinosita, Y. Gotoh, T. Uchiyama, S. Manalis, and C. Quate, Appl. Phys. Lett. 78, 539 (2001). apl APPLAB 0003-6951
17. F. Y. Meng, W. K. Wong, Q. Li, N. Shang, and I. Bello (unpublished).
18. A. Wadhawan, R. E. Stallcup II, and J. M. Perez, Appl. Phys. Lett. 78, 108 (2001). apl APPLAB 0003-6951
19. K. A. Dean and B. R. Chalamala, Appl. Phys. Lett. 76, 375 (2000). apl APPLAB 0003-6951