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Volumn 92, Issue 11, 2008, Pages

Abrupt InGaPGaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; VAPOR PHASE EPITAXY;

EID: 41049099503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2884694     Document Type: Article
Times cited : (19)

References (16)
  • 13
    • 0026202777 scopus 로고
    • ULTRD6 0304-3991 10.1016/0304-3991(91)90004-P.
    • S. J. Pennycook and D. E. Jesson, Ultramicroscopy ULTRD6 0304-3991 10.1016/0304-3991(91)90004-P 37, 14 (1991).
    • (1991) Ultramicroscopy , vol.37 , pp. 14
    • Pennycook, S.J.1    Jesson, D.E.2
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.