Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE

Journal of Crystal Growth

Volumn 296, Issue 2, 2006, Pages 179-185

  Nakano, T ^a,c   Nakano, Y ^b,c   Shimogaki, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Interface; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III V materials; B2. Semiconducting indium gallium phosphide

Indexed keywords

ADSORPTION; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE; SURFACE PROCESSES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33750505406     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.029     Document Type: Article

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