On the high-performance n+ - GaAs/p+ -InGaP/n-GaAs high-barrier gate camel-like HFETs

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 19-24

  Wang, Chih Kai ^a   Yu, Kuo Hui ^a   Chiou, Wen Hui ^a   Chen, Chun Yuan ^a   Chuang, Hung Ming ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Heterostructure channel; High breakdown; Low leakage

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC DRIVES; ELECTRIC POTENTIAL; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BARRIER HEIGHT;

GATES (TRANSISTOR);

EID: 0037210879     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00306-4     Document Type: Article

References (13)

1. Kao M.Y., Smith P.M., Ho P., Chao P.C., Duh K.H.G., Jabra A.A.et al. IEEE Electron. Dev. Lett. 10:1989;580.
2. Tan K.L., Streit D.C., Dia R.M., Wang S.K., Han A.C., Chow P.M.D.et al. IEEE Electron. Dev. Lett. 12:1991;213.
3. Lee J.L., Kim K., Mun J.K., Kwon O., Lee J.J., Park H.M.et al. Electron. Lett. 30:1994;739.
4. Chen C.L., Mahoney L.J., Manfra M., Smith F.W., Temme D.H., Calawa A.R. IEEE Electron. Dev. Lett. 13:1992;335.
5. Laih L.W., Cheng S.Y., Wang W.C., Lin P.H., Chen J.Y., Liu W.C.et al. Electron. Lett. 33:1997;98.
6. Okamoto Y., Matsunaga K., Kuzuhara M. Electron. Lett. 31:1995;2216.
7. Shealy J.B., Hashemi M.M., Kiziloglu K., Denbaars S.P., Mishra U.K., Liu T.K.et al. IEEE Electron. Dev. Lett. 14:1993;545.
8. Lour W.S., Tsai J.H., Laih L.W., Liu W.C. IEEE Trans. Electron. Dev. 43:1996;871.
9. Rao M.A., Caine E.J., Kroemer H., Loun S.I., Babic D.I. J. Appl. Phys. 61:1987;643.
10. Tedosco C., Zanoni E., Canali C., Bigliardi S., Manfredi M., Streit D.C.et al. IEEE Trans. Electron. Dev. 40:1993;1211.
11. Thorne R.E., Su S.L., Kopp W., Fischer R., Drummond T.J., Morkoc H. J. Appl. Phys. 53:1982;5951.
12. Dumka D.C., Cueva G., Adesida I., Hier H., Aina O.A. Electron. Lett. 35:1999;1673.
13. Das M.B. IEEE Trans. Electron. Dev. 32:1985;11.