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Volumn 49, Issue 11, 2001, Pages 2105-2111

Measurement and characterization of HEMT dynamics

Author keywords

HEMTs; High speed devices; Impact ionization; Kink effect; Pulsed characterization

Indexed keywords

DISPERSION EFFECTS; DRAIN CURRENT MODEL; PULSE MEASUREMENT; TRAPPING EFFECTS;

EID: 0035507119     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.963144     Document Type: Article
Times cited : (39)

References (13)
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    • Kruppa, W.1    Brad, J.B.2
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    • Pulse measurements quantify dispersion in PHEMT's
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    • A. E. Parker and D. E. Root, "Pulse measurements quantify dispersion in PHEMT's," in URSI Signals, Syst., Electron. Symp., Sept. 29-Oct. 2, 1998, pp. 444-449.
    • (1998) URSI Signals, Syst., Electron. Symp. , pp. 444-449
    • Parker, A.E.1    Root, D.E.2
  • 9
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    • T. Suemitsu, T. Enoki, N. Sano, M. Tomizawa, and Y. Ishii, "An analysis of the kink phenomena in In-AlAs/InGaAs HEMT's using two-dimensional device simulation," IEEE Trans. Electron Devices, vol. 45, pp. 2390-2399, Dec. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2390-2399
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    • A physical model for the kink effect in In-AlAs/InGaAs HEMT's
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    • M. H. Somerville, A. Ernst, and J. A. del Almo, "A physical Model for the kink effect in In-AlAs/InGaAs HEMT's," IEEE Trans. Electron Devices, vol. 47, pp. 922-930, May 2000.
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    • Somerville, M.H.1    Ernst, A.2    Del Almo, J.A.3
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    • Impact ionization in In- AlAs/InGaAs/InAlAs HEMT's
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    • R. T. Webster, S. Wu, and A. F. M. Anwar, "Impact ionization in In- AlAs/InGaAs/InAlAs HEMT's," IEEE Electron Device Lett., vol. 21, pp. 193-195, May 2000.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.