Structure of nanoindentations in heavily n- and p-doped (0 0 1) GaAs

Acta Materialia

Volumn 56, Issue 7, 2008, Pages 1417-1426

  Le Bourhis, E ^a   Patriarche, G ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

Compound semiconductors; Nanoindentation; Plastic deformation; Transmission electron microscopy (TEM)

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); HARDNESS; NANOINDENTATION; SHEAR STRESS; TRANSMISSION ELECTRON MICROSCOPY;

BERKOVICH INDENTERS; COMPOUND SEMICONDUCTORS; ROSETTE ARMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40849137737     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.11.036     Document Type: Article

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