Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity

Journal of Electronic Materials

Volumn 32, Issue 8, 2003, Pages 861-867

  Patriarche, G ^a   Le Bourhis, E ^b  

^a UNIV PARIS SUD   (France)

^b UNIVERSITÉ DE POITIERS   (France)

Author keywords

Compliant substrate; Heteroepitaxial layer; Nanoindentation; Transmission electron microscopy; Twist bonding; Wafer bonding

Indexed keywords

CHEMICAL BONDS; EPITAXIAL GROWTH; INDENTATION; INTERFACES (MATERIALS); PLASTICITY; SUBSTRATES; SURFACE PROPERTIES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

COMPLAINT STRUCTURES; HETEROEPITAXIAL GROWTH; MECHANICAL BEHAVIOR; NANOINDENTATION; SURFACE PLASTICITY; TWIST BONDED COMPLAINT SUBSTRATE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041941104     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0201-4     Document Type: Article

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