Defect influence on luminescence efficiency of GaN-based LEDs

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 371-374

  Li, Shuping ^a   Fang, Zhilai ^a   Chen, Hangyang ^a   Li, Jinchai ^a   Chen, Xiaohong ^a   Yuan, Xiaoli ^b   Sekiguchi, Takashi ^b   Wang, Qiming ^c   Kang, Junyong ^a  

^a XIAMEN UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Defects; GaN; LED; Luminescence efficiency

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS;

BUFFER LAYER; ELECTRON INJECTION EFFICIENCY; INTERFACE DISTORTION; LUMINESCENCE EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 33744543043     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.019     Document Type: Article

References (4)

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2. Hsu J.T., Han W.K., Chen C.L., et al., Design of multichip LED module for lighting application. Proc SPIE Int Soc Opt Eng 4776 (2002) 26-33
3. Kucheyev S.O., Toth M., Phillips M.R., et al., Chemical origin of the yellow luminescence in GaN. J Appl Phys 91 (2002) 5867-5874
4. Kang J.Y., Shen Y.W., and Wang Z.G. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers. Mater Sci Eng B91-92 (2002) 303-307