Lifetime tests and junction-temperature measurement of InGaN light-emitting diodes using patterned sapphire substrates

Journal of Lightwave Technology

Volumn 25, Issue 2, 2007, Pages 591-596

  Tsai, P C ^a   Chuang, Ricky W ^a   Su, Y K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Junction temperature; Light emitting diode (LED); Patterned sapphire substrate; Thermal resistance

Indexed keywords

HEAT RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

JUNCTION TEMPERATURE; PATTERNED SAPPHIRE SUBSTRATE;

LIGHT EMITTING DIODES;

EID: 34147161832     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2006.888234     Document Type: Article

References (12)

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