IV-VI diluted magnetic semiconductor Ge1-x Mnx Te epilayer grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 103, Issue 5, 2008, Pages

  Fukuma, Y ^a,e   Goto, K ^b   Senba, S ^b   Miyawaki, S ^c   Asada, H ^c   Koyanagi, T ^c   Sato, H ^d  

^a Yamaguchi Prefectural Industrial Technology Institute   (Japan)

^b UBE NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e UNIVERSITY OF ALABAMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC ORDER; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

EPILAYERS; MAGNETIC PROPERTIES; MAGNETIZATION; MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR MATERIALS;

EID: 40849088141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2871193     Document Type: Article

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