Growth and magnetic properties of IV-VI diluted magnetic semiconductor Ge1-x Crx Te

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Fukuma, Y ^a   Taya, T ^b   Miyawaki, S ^b   Irisa, T ^b   Asada, H ^b   Koyanagi, T ^b  

^a Yamaguchi Prefectural Industrial Technology Institute   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; FERROMAGNETISM; GERMANIUM ALLOYS; HALL EFFECT; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION ANALYSIS;

DIRECT MAGNETIZATION; HIGH-ENERGY ELECTRON DIFFRACTION; IV-VI DILUTED MAGNETIC SEMICONDUCTOR GE1-X CRX TE;

MAGNETIC SEMICONDUCTORS;

EID: 33646722448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2163830     Document Type: Article

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