Internal photoemission spectroscopy of metal gate/high-k/semiconductor interfaces

AIP Conference Proceedings

Volumn 931, Issue , 2007, Pages 308-314

  Nguyen, N V ^a   Kirillov, O ^a   Xiong, H D ^a   Suehle, J S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

High k dielectric; Internal photoemission; Metal oxide semiconductor

Indexed keywords

EID: 35348919420     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799389     Document Type: Conference Paper

References (7)

1. J. K. Schaeffer, S.B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogap, B.-Y Nguyen, B. E. White, Jr., S. Dakshina-Murphy, R. S. Rai, Z.-X Jiang, R. Martin, M. V. Raymond, M. Zaval, L. B. La, J. A. Smith, R. Garcia, D. Roan, K. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. B 21, 11 (2003).
2. V. K. Admachuk and V. V. Afanas'ev, Progr. Surf. Sci. 41, 111 (1992).
3. D. H. Fowler, Phys. Rev. 38, 45 (1931).
4. R. J. Powell, J. Appl. Phys. 41, 2424 (1970).
5. S. M. Sze, "Physics of Semiconductor Devices", John Wiley & Sons, Inc, 1981.
6. Y.-C. Yeo, T.-J. King, and C. Hu, J. Appl. Phys. 92, 7266 (2002).
7. V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, and S. A. Campbell, Appl. Phys. Lett. 81, 1053 (2002).