Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1476-1479

  Xin, H P ^a   Tu, C W ^a   Geva, M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HYDROGEN; MOLECULAR BEAM EPITAXY; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; STRAIN; THERMODYNAMIC STABILITY;

GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0034186967     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591407     Document Type: Article

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