Novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 421-423

  Shih, Po Sheng ^a   Chang, Chun Yen ^a   Chang, Ting Chang ^b   Huang, Tiao Yuan ^a   Peng, Du Zen ^a   Yeh, Ching Fa ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

LIGHTLY DOPED DRAIN POLYSILICON THIN FILM TRANSISTORS; ONE-STEP SELECTIVE LIQUID PHASE DEPOSITIONS; OXIDE SIDEWALL SPACERS;

THIN FILM TRANSISTORS;

EID: 0032634580     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778164     Document Type: Article

References (8)

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