Growth and characterization of GaInNP grown on GaAs substrates

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 437-442

  Hong, Y G ^a   Juang, F S ^b   Kim, M H ^c   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting indium gallium phosphide; B2. Semiconducting indium gallium phosphide nitride

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

RADIATIVE RECOMBINATION;

CRYSTAL GROWTH;

EID: 0037382108     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02216-9     Document Type: Conference Paper

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