Gas-source molecular beam expitaxy of GaInNP/GaAs and a study of its band lineup

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1413-1416

  Hong, Y G ^a   Andre R ^a,b   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LIPHY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NITROGEN; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM; GAS SOURCE MOLECULAR BEAM EPITAXY; HIGH RESOLUTION X-RAY ROCKING CURVE;

HETEROJUNCTIONS;

EID: 0035535277     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1381069     Document Type: Article

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