Optimization of III-N based devices grown by RF atomic nitrogen plasma using in situ cathodoluminescence

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 51-56

  Van Hove, J N ^a   Chow, P P ^a   Klaassen, J J ^a   Hickman, R ^a   Wowchak, A M ^a   Croswell, D R ^a   Polley, C ^a  

^a SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; FILMS; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

PIN JUNCTIONS;

SEMICONDUCTOR GROWTH;

EID: 0030721351     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-51     Document Type: Conference Paper

References (8)