Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 553-557

  Anantathanasarn, S ^a   Notzel R ^a   van Veldhoven, P J ^a   van Otten, F W M ^a   Eijkemans, T J ^a   Barbarin, Y ^a   de Vries, T ^a   Smalbrugge, E ^a   Geluk, E J ^a   Bente, E A J M ^a   Oei, Y S ^a   Smit, M K ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A1. Quantum dot; A3. Metalorganic vapor phase epitaxy; B1. InAs; B1. InGaAsP; B1. InP (1 0 0); B3. Laser diodes

Indexed keywords

LIGHT AMPLIFIERS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TUNERS;

ELECTRONIC COUPLING; INTERLAYER THICKNESS; TELECOM LASERS; WAVELENGTH TUNING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846418764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.173     Document Type: Article

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