High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

Semiconductors

Volumn 42, Issue 2, 2008, Pages 211-214

  Grekhov, I V ^a   Ivanov, P A ^a   Il'inskaya, N D ^a   Kon'Kov, O I ^a   Potapov, A S ^a   Samsonova, T P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 39749198233     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/s1063782608020176     Document Type: Article

References (11)

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