Almost ideal thermionic-emission properties of Ti-based 4H-SiC Schottky Barrier Diodes

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1147-1150

  Stephani, D ^a   Schoemer, R ^a   Peters, D ^a   Friedrichs, P ^a  

^a SIEMENS AG   (Germany)

Author keywords

1200 V Schottky barrier diodes; 4H SiC Richardson constant; C V barrier; I V barrier; Thermionic emission

Indexed keywords

CONCENTRATION (PROCESS); SILICON CARBIDE; THERMAL EFFECTS; TITANIUM;

RICHARDSON CONSTANT; ROOM TEMPERATURE; THERMIONIC EMISSION PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 37849037018     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1147     Document Type: Conference Paper

References (3)

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2. E.H. Rhoderick and R.H. Williams: "Metal-Semiconductor Contacts", Second Edition (1988) Monographs in Electrical and Electronic Engineering No. 19 Oxford Science Publications
3. D. Volm et al.: "Determination of the electron effective-mass tensor in 4H SiC", Phys. Rev. B 53 (1996), p. 15409