-
1
-
-
34547154312
-
Scaling-induced reductions in CMOS reliability margins
-
J. McPherson, "Scaling-induced reductions in CMOS reliability margins" IEEE-ISQED Proceedings, 123 (2001).
-
(2001)
IEEE-ISQED Proceedings
, vol.123
-
-
McPherson, J.1
-
2
-
-
34547171748
-
Yield and reliability challenges for 32nm and beyond
-
J. McPherson, "Yield and reliability challenges for 32nm and beyond", IEEE-IEDM Shortcourse (2005).
-
(2005)
IEEE-IEDM Shortcourse
-
-
McPherson, J.1
-
3
-
-
34547175822
-
Reliability challenges associated with interconnect scaling
-
J. McPherson, "Reliability challenges associated with interconnect scaling, MRS Tutorial (2006).
-
(2006)
MRS Tutorial
-
-
McPherson, J.1
-
4
-
-
34250742624
-
Prediction of logic product failure due to thin gate oxide breakdown
-
Y-H Lee "Prediction of logic product failure due to thin gate oxide breakdown", IEEE-IRPS Proceedings, 18 (2006).
-
(2006)
IEEE-IRPS Proceedings
, vol.18
-
-
Lee, Y.-H.1
-
5
-
-
0036051616
-
-
A. Rotondaro, et al., Advanced CMOS transistors with novel HfSiON gate dielectric, VLSI Technology Digest of Technical Papers, 148 (2002).
-
A. Rotondaro, et al., "Advanced CMOS transistors with novel HfSiON gate dielectric", VLSI Technology Digest of Technical Papers, 148 (2002).
-
-
-
-
6
-
-
34547207215
-
Leakage, breakdown and TDDB characteristics of porous low-k silica
-
E. Ogawa, et al., "Leakage, breakdown and TDDB characteristics of porous low-k silica", IEEE-IRPS Proceedings, 166(2003)
-
(2003)
IEEE-IRPS Proceedings
, vol.166
-
-
Ogawa, E.1
-
7
-
-
34547224138
-
Correlation of surface and film chemistry with mechanical properties
-
Y. Zhou, et al., "Correlation of surface and film chemistry with mechanical properties". ULSI Metrology Conf, (2003).
-
(2003)
ULSI Metrology Conf
-
-
Zhou, Y.1
-
8
-
-
0041803879
-
Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxides
-
E. Wu, et. al., "Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxides", IEEE - IRPS Proceedings, 60 (2002).
-
(2002)
IEEE - IRPS Proceedings
, vol.60
-
-
Wu, E.1
et., al.2
-
9
-
-
46049086984
-
-
P. Nicollian, et. al., The traps that cause breakdown in deeply scaled SiON Dielectrics, IEDM Digest of Technical Papers, 743 (2006).
-
P. Nicollian, et. al., "The traps that cause breakdown in deeply scaled SiON Dielectrics", IEDM Digest of Technical Papers, 743 (2006).
-
-
-
-
10
-
-
39549093699
-
Dielectric reliability models and mechanisms
-
P. Nicollian, "Dielectric reliability models and mechanisms", IEEE-IRPS Tutorials, 221 (2003).
-
(2003)
IEEE-IRPS Tutorials
, vol.221
-
-
Nicollian, P.1
-
11
-
-
0042527442
-
Trends in the ultimate breakdown strength of high dielectric-constant materials
-
J. McPherson, et al., "Trends in the ultimate breakdown strength of high dielectric-constant materials", IEEE Trans. On Elect. Devs., Vol. 50, 1771 (2003).
-
(2003)
IEEE Trans. On Elect. Devs
, vol.50
, pp. 1771
-
-
McPherson, J.1
-
12
-
-
34547226818
-
Impact of NBTI instability on digital circuit reliability
-
V. Reddy, et al., "Impact of NBTI instability on digital circuit reliability", IEEE-IRPS Proceedings, 248 (2002).
-
(2002)
IEEE-IRPS Proceedings
, vol.248
-
-
Reddy, V.1
-
13
-
-
0026140861
-
AC hot-carrier effects in scaled MOS devices
-
E. Takeda, et al., "AC hot-carrier effects in scaled MOS devices", IEEE-IRPS Proceedings, 118(1991).
-
(1991)
IEEE-IRPS Proceedings
, vol.118
-
-
Takeda, E.1
-
14
-
-
33748538163
-
Hot carrier degradation in novel strained-Si nMOSFET
-
M. Lu, et. al., "Hot carrier degradation in novel strained-Si nMOSFET", IEEE - IRPS Proceedings, 18 (2004).
-
(2004)
IEEE - IRPS Proceedings
, vol.18
-
-
Lu, M.1
et., al.2
-
15
-
-
34250785652
-
Effects of hot carrier stress on the reliability of strained-Si MOSFETs
-
S. Dey, "Effects of hot carrier stress on the reliability of strained-Si MOSFETs", IEEE - IRPS Proceedings, 461 (2006).
-
(2006)
IEEE - IRPS Proceedings
, vol.461
-
-
Dey, S.1
-
16
-
-
34547213393
-
Effects of overlayers on electromigration reliability improvement for Cu/Low-k
-
C-K Hu, "Effects of overlayers on electromigration reliability improvement for Cu/Low-k", IEEE-IRPS Proceedings, 222 (2004).
-
(2004)
IEEE-IRPS Proceedings
, vol.222
-
-
Hu, C.-K.1
-
17
-
-
78751524110
-
Sress-induced voiding under vias connected to wide Cu leads
-
E. Ogawa, et al., "Sress-induced voiding under vias connected to wide Cu leads", IEEE-IRPS Proceedings, 312 (2002).
-
(2002)
IEEE-IRPS Proceedings
, vol.312
-
-
Ogawa, E.1
-
18
-
-
0001163312
-
A Model for Stress-Induced metal notching and voiding in Al-Si Metallization
-
J. McPherson and C. Dunn, "A Model for Stress-Induced metal notching and voiding in Al-Si Metallization", J. Vacuum Science & Technology B, 1321 (1987).
-
(1987)
J. Vacuum Science & Technology B
, vol.1321
-
-
McPherson, J.1
Dunn, C.2
-
19
-
-
33847756354
-
Stress-induced voiding under vias connected to narrow Cu lines, IEEE-IEDM
-
T. Kouno, et al., "Stress-induced voiding under vias connected to narrow Cu lines", IEEE-IEDM Tech. Digest, 195 (2005).
-
(2005)
Tech. Digest
, vol.195
-
-
Kouno, T.1
|