Effects of hot carrier stress on reliability of strained-Si MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 461-464

  Dey, S ^a   Agostinelli, M ^b   Prasad, C ^b   Wang, X ^b   Shifren, L ^b  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

CMOS IC; Hot electron degradation; Uniaxial strained Si MOSFET

Indexed keywords

DIELECTRIC BARRIER; HOT ELECTRON RELIABILITY; HOT-ELECTRON DEGRADATION; MECHANICAL STRESS;

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; HOT CARRIERS; IMPACT IONIZATION; RELIABILITY;

MOSFET DEVICES;

EID: 34250785652     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251262     Document Type: Conference Paper

References (7)

1. S.E.Thompson, et.al, "A 90-nm Logic Technology Featuring Strained-Silicon", IEEE Trans.Elec. Dev, vol. 51(11),2004,pp.l790-1797.
2. M. V. Fischetti, et.al, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," J. Appl. Phys., vol. 80(4), 1996, pp. 2234-2252.
3. D. Kelly et al., "Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFET", Journal of Microelectronics Reliability, vol 45, July-August,2005,pp. 1033-1040.
4. D. Onsongo, et al., "Improved hot-electron reliability in strained-Si nMOS", IEEE Trans Electron Dev; vol. 51(12), 2004, pp. 2193-2199.
5. A. Hamada, et. al., "A new aspect of mechanical stress effects in scaled MOS devices", IEEE Trans Electron Dev, vol. 3 8(4), 1991, pp. 895-900.
6. M.F. Lu et al., "Hot carrier degradation in novel strained-Si nMOSFETs", Intl. Reliability Physics Symp., 2004, pp. 18-22.
7. L.Shifren et al., "Drive current enhancement in p-type metal-oxide-semiconductor-field-effect transistors under shear uniaxial stress", Applied Physics Letters, vol. 85(25), 2004, pp. 6188-6190