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Volumn T126, Issue , 2006, Pages 121-126
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Developments in the growth of wide bandgap semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
ELECTRONIC PROPERTIES;
ENERGY GAP;
GALLIUM NITRIDE;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
ZINC OXIDE;
MATERIAL QUALITY;
WIDE BANDGAP SEMICONDUCTORS;
SEMICONDUCTOR MATERIALS;
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EID: 39549098914
PISSN: 02811847
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1088/0031-8949/2006/T126/027 Document Type: Conference Paper |
Times cited : (5)
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References (26)
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