Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 139-142

  Smorodin, Tobias ^a   Stecher, Matthias ^a   Glavanovics, Michael ^b   Wilde, Jürgen ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Kompetenzzentrum Automobil und Industrie Elektronik Gmbh   (Austria)

^c UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; FAILURE ANALYSIS; METALLIZING; SWITCHES;

DMOS-SWITCHES; ELECTROMIGRATION STRESS; THERMO-MECHANICAL DEFORMATIONS; THERMO-MECHANICAL FAILURE MECHANISMS;

MOS DEVICES;

EID: 39549087880     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430898     Document Type: Conference Paper

References (8)

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5. M. Glavanovics et al., "A new Cycle Test System emulating Inductive Switching Waveforms", EPE 2007, Aalborg, Denmark, in press.
6. T. Smorodin, J. Wilde, P. Alpern, M. Stecher, "Investigation and improvement of fast temperature-cycle reliability for DMOS-related conductor path design", IEEE IRPS 2007, in press.
7. T. Detzel and M. Glavanovics, "Analysis of wire bond and metallization degradation mechanisms in DMOS power transitors stressed under thermal overload conditions" Microelectronics Reliability, 2004, vol. 44, pp. 1485-1490.
8. J. M. Bosc et al., "Reliability Characterization of LDMOS Transistors submitted to Multiple Energy Discharges", ISPSD, 2000, pp. 165-168.