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Volumn , Issue , 2007, Pages

A new cycle test system emulating inductive switching waveforms

Author keywords

Automotive electronics; Diagnostics, measurement; MOSFET; Power cycling; Power integrated circuit; Power semiconductor device; Reliability; Robustness; Smart power; Thermal stress

Indexed keywords

AUTOMOTIVE ELECTRONICS; DIAGNOSTICS, MEASUREMENT; MOSFET; POWER CYCLING; POWER SEMICONDUCTOR DEVICE; ROBUSTNESS; SMART POWER;

EID: 67649416382     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2007.4417742     Document Type: Conference Paper
Times cited : (15)

References (12)
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  • 2
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    • Operation of power semiconductors under transient thermal conditions: Thermal fatigue reliability and mechanical aspects
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  • 3
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    • Reliability Characterization of LDMOS Transistors submitted to Multiple Energy Discharges
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  • 4
    • 67649439399 scopus 로고    scopus 로고
    • AEC-Q 100-F.2, Stress Test Qualification for Integrated Circuits, Automotive Electronics Council, 2003
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  • 5
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    • Development of a Repetitive Clamping Test System Hardware for Smart Power Switches
    • Diploma thesis, Fachhochschule fur Elektronik Villach, Austria
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  • 6
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    • Helmut Köck, "Development of Lab VIEW Realtime FPGA Software for Cycle Test Systems", Diploma thesis, Fachhochschule für Telematik Klagenfürt, Austria, 2006
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    • Köck, H.1
  • 7
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    • Thermal Resistance Analysis by Induced Transient (TRAIT) Method for Power Electronic Devices Thermal Characterization
    • Nov
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    • Bagnoli, P.E.1
  • 8
    • 0007097719 scopus 로고
    • Transient Thermal Impedance of Semiconductor Devices
    • Diebold, E.J., and Luft, W., "Transient Thermal Impedance of Semiconductor Devices", AIEE Trans., vol. 79, part J, p.719, 1961
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    • Diebold, E.J.1    Luft, W.2
  • 9
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    • M. Glavanovics, Th. Detzel, K. Weber, Impact of Thermal Overload Operation on Wirebond and Metallization Reliability in Smart Power Devices, ESSDERC 2004, Leuven, Belgium
    • M. Glavanovics, Th. Detzel, K. Weber, "Impact of Thermal Overload Operation on Wirebond and Metallization Reliability in Smart Power Devices", ESSDERC 2004, Leuven, Belgium
  • 10
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    • Thermal characterization of LDMOS transistors for accelerating stress testing
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.