Reliability characterization of LDMOS transistors submitted to multiple energy discharges

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 165-168

  Bosc, J M ^a   Percheron Garcon, I ^a   Huynh, E ^a   Lance, P ^a   Pages, I ^a   Dorkel, J M ^a   Sarrabayrouse, G ^a  

^a MOTOROLA INC   (United States)

Author keywords

Accelerated stress testing; Anti lock braking system; Focused ion beam; Lateral double diffused MOS; P type high voltage region; Scanning electron microscope; Transmission electron microscope

Indexed keywords

GATES (TRANSISTOR); ION BEAMS; POWER INTEGRATED CIRCUITS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

LDMOS TRANSISTOR; THERMAL CHARACTERIZATION; THERMAL FATIGUE;

MOSFET DEVICES;

EID: 0034449593     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Power mosfet failure revisited
2. Clamped inductive switching of LDMOST for smart power IC's
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5. Thermal characterization: A key element for accelerating stress testing
6. Void formation mechanism in VLSI aluminium metallization
7. The influence of plasma silicon nitride passivation film quality on aluminium void formation