Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 135-139

  Nguyen, H V ^a   Salm, C ^a   Vroemen, J ^b,c   Voets, J ^b,c   Krabbenborg, B ^b,c   Bisschop, J ^b,c   Mouthaan, A J ^a   Kuper, F G ^a,b,c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c NONE   (Netherlands)

Author keywords

Electromigration; Hazards; Heating; Power integrated circuits; Power system interconnection; Power system reliability; System testing; Temperature distribution; Temperature sensors; Transistors

Indexed keywords

ELECTROMIGRATION; ENVIRONMENTAL CHAMBERS; FAILURE ANALYSIS; HAZARDS; HEATING; INTEGRATED CIRCUITS; OUTAGES; POWER INTEGRATED CIRCUITS; RELIABILITY; TEMPERATURE DISTRIBUTION; TEMPERATURE SENSORS; TRANSISTORS;

DESIGN AND APPLICATION; FAILURE DISTRIBUTIONS; MULTILEVEL INTERCONNECTION; POWER SYSTEM INTERCONNECTION; POWER SYSTEM RELIABILITY; REALISTIC CONDITIONS; SYSTEM TESTING; TEMPERATURE TRANSIENTS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 50349094829     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025632     Document Type: Conference Paper

References (11)

1. EIA/JEP122: "Failure Mechanism and Model for Silicon Semiconductor Devices", EIA/JEDEC Pub. Dec. 2001.
2. th Annual Proc. Int. Rel. Phys. Sym., 2000, pp. 231-235.
3. th Annual Proc. Int. Rel. Phys. Sym., 1990, pp. 252-258.
4. th Annual Proc. Int. Rel. Phys. Sym., 1991, pp. 22-29.
5. th Annual Proc. Int. Rel. Phys. Sym., 1997, pp. 110-117.
6. th Annual Proc. Int. Rel. Phys. Sym., 1991, pp. 30-34.
7. th Annual Proceeding of Semiconductor for Future Electronic (SAFE), 2001, pp.136-141.
8. EIA/JESD33-A: "Standard Method for Measuring and Using the Temperature Coefficient of Resistance to Determine the Temperature of a Metallization Line", EIA/JEDEC Pub. Oct. 1995.
9. A. J. Kalkman, A. H. Verbruggen, G. C. A. M. Janssen and S. Radelaar. "Kinetic of Cu Segregation in Al-Cu (1 a t% Cu) Interconnects Studied by Resistance Measurements", Mat. Res. Soc. Symp. Proc. Vol. 473, 1997, pp. 267-272.
10. F. M.d'Heurle, N. G. Ainslie, A. Gangulee, and M. C. Shine, "Activation Energy for Electromigration Failure in Aluminum Films Containing Copper", J. Vac. Sci. Technol. A, Vol. 9, No. 1971, pp.289-292.
11. T. M. Shaw, C. K. Hu, K. Y. Lee, and R. Rosenberg, "Copper Migration and Precipitate Dissolution in Aluminum/Copper Line During Electromigration Testing", Mat. Res. Soc. Symp. Proc. Vol. 428, 1996, pp. 187-199.