Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 1183-1190

  Moriyama, Y ^a   Hirashita, N ^a   Toyoda, E ^b   Usuda, K ^a   Nakaharai, S ^a   Sugiyama, N ^a   Takagi, S ^c,d  

^a MIRAI ASET   (Japan)

^b Nissei Bldg   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; SURFACE ROUGHNESS;

GERMANIUM ON INSULATOR (GOI); SILICON-GERMANIUM ON INSULATOR (SGOI) SUBSTRATES; THERMAL CLEANING; WET CLEANING METHODS;

SURFACE CLEANING;

EID: 33847006275     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355912     Document Type: Conference Paper

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