A computer analysis of double junction solar cells with a-Si : H absorber layers

Solar Energy Materials and Solar Cells

Volumn 53, Issue 3-4, 1998, Pages 235-245

  Palit, Nandita ^a   Chatterjee, Parsathi ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

a Si : H based double junction solar cells; Modelling; Quantum efficiency; Thickness optimisation

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; COMPUTER AIDED ANALYSIS; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL DEVICES; ENERGY GAP; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SOLAR ABSORBERS;

DOUBLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 0032095040     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(98)00010-5     Document Type: Article

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