20.7% highest efficiency large area (100.5 cm2) HIT™ cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 7-12

  Sakata, Hitoshi ^a   Nakai, Takuo ^a   Baba, Toshiaki ^a   Taguchi, Mikio ^a   Tsuge, Sadaji ^a   Uchihashi, Kenji ^a   Kiyama, Seiichi ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; EFFICIENCY; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PASSIVATION; PRODUCT DEVELOPMENT; SILICON; SILICON WAFERS;

HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HIT CELLS; MASS PRODUCTION; PASSIVATION EFFECT; RECENT RESEARCHES; WAFER SIZES; WORLD RECORDS;

SOLAR CELLS;

EID: 84949552103     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915742     Document Type: Conference Paper

References (5)

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2. Taguchi M, Tanaka M, Matsuyama T, Matsuoka T, Tsuda S, Nakano S, Kishi Y, Kuwano Y: Technical Digest of the International PVSEC-5, Kyoto, 1990; 689-692
3. Sawada T, Terada N, Tsuge S, Baba T, Takahama T, Wakisaka K, Tsuda S, Nakano S. High Efficiency a-Si/c-Si Heterojunction Solar Cell. Conference Record, the first WCPEC, Hawaii, 1994; 1219-1226
4. S. Der and B.R. Nag. Measurement of lifetime of Carriers in Semiconductors through Microwave Reflection. J. Appl. Phys. 33 (1962) pp 1604
5. Kurita K, Shingyouji T, Low Surface Recombination Velocity on Silicon Wafer Surface due to Iodine-Ethanol Treatment. Jpn. J. Appl. Phys., 1999; 38: 5710-5714