Coplanar poly-Si TFT on flexible metal foil using spin-on glass as gate insulator and planarization

Electrochemical and Solid-State Letters

Volumn 11, Issue 4, 2008, Pages

  Cheon, Jun Hyuk ^a   Bae, Jung Ho ^a   Lee, Won Gyu ^a   Jang, Jin ^a,b  

^a Kyung Hee University   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC POTENTIAL; GATE DIELECTRICS; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; SURFACE ROUGHNESS;

COPLANAR POLY-SI TFT; FLEXIBLE DISPLAYS; FLEXIBLE METAL FOIL; GATE INSULATOR; GATE-BIAS STRESS;

THIN FILM TRANSISTORS;

EID: 39349099120     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2836740     Document Type: Article

References (17)

1. E. Y. Ma and S. Wagner, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123930, 74, 2661 (1999).
2. J. Jang, Mater. Today MTOUAN 1369-7021 10.1016/S1369-7021(06)71447-X, 9, 46 (2006).
3. J. H. Cheon, J. H. Choi, J. H. Hur, J. Jang, H. S. Shin, J. K. Jeong, Y. G. Mo, and H. K. Chung, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.871873, 53, 1273 (2006).
4. P. M. Smith, P. G. Carey, and T. W. Sigmon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118409, 70, 342 (1997).
5. H. Gleskova, S. Wagner, Q. Zhang, and D. S. Shen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.641433, 18, 523 (1997).
6. I. Yudasaka, H. Tanaka, and T. Shimoda, in Digest of Technical Papers of AM-LCD 05, p. 79 (2005).
7. S. Nakamura, K. Azuma, T. Unate, and A. Nakasuga, in SID Symposium Digest of Technical Papers 36, Society for Information Display, p. 510 (2005).
8. J. H. Cheon, J. H. Bae, and J. Jang, IEEE Electron Device Lett., In press.
9. J. H. Choi, D. Y. Kim, B. K. Choo, W. S. Sohn, and J. Jang, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.1527411, 6, G16 (2003).
10. J. H. Choi, D. Y. Kim, S. S. Kim, S. J. Park, and J. Jang, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(03)00821-6, 440, 1 (2003).
11. W. S. Sohn, J. H. Choi, K. H. Kim, J. H. Oh, S. S. Kim, and J. Jang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1604958, 94, 4326 (2003).
12. T. Afentakis, M. K. Hatalis, A. T. Voutsas, and J. W. Hartzell, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172. 769, H2.5.1 (2003).
13. J. H. Cheon, J. H. Bae, and J. Jang, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2781528, 10, J155 (2007).
14. S. Ito, Y. Homma, E. Sasaki, S. Uchimura, and H. Morishima, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2086634, 137, 1212 (1990).
15. J. H. Choi, S. S. Kim, J. H. Cheon, S. J. Park, Y. D. Son, and J. Jang, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1752936, 151, G448 (2004).
16. M. Hack, A. G. Lewis, and I. W. Wu, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.210195, 40, 890 (1993).
17. N. D. Young, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.485660, 43, 450 (1996).