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Volumn , Issue , 2006, Pages 169-176

Implications of proximity effects for analog design

Author keywords

[No Author keywords available]

Indexed keywords

GRADED CHANNELS; PROXIMITY EFFECTS;

EID: 39049131196     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2006.320869     Document Type: Conference Paper
Times cited : (83)

References (12)
  • 1
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    • T Hook, et al. The Dependence of Channel Length on Channel Width in Narrow-Channel CMOS Devices for 0.25-0.13 um Technologies, IEEE Electron Device Letters, 21 no 2 2000 pp. 85-87.
    • T Hook, et al. "The Dependence of Channel Length on Channel Width in Narrow-Channel CMOS Devices for 0.25-0.13 um Technologies," IEEE Electron Device Letters, vol. 21 no 2 2000 pp. 85-87.
  • 2
    • 0242696135 scopus 로고    scopus 로고
    • A Scaleable Model for STI Mechanical Stress Effect on Layout Dependence of MOS Electrical Characterization
    • K. W. Su, et al., "A Scaleable Model for STI Mechanical Stress Effect on Layout Dependence of MOS Electrical Characterization," 2003 IEEE CICC, pp. 245-248.
    • (2003) IEEE CICC , pp. 245-248
    • Su, K.W.1
  • 3
    • 0033325124 scopus 로고    scopus 로고
    • NMOS Drive Current Reduction Caused by Transistor Layout and Trench Isolation Induced Stress
    • G. Scott, et al., "NMOS Drive Current Reduction Caused by Transistor Layout and Trench Isolation Induced Stress," 1999 IEEE IEDM, pp. 827-830.
    • (1999) IEEE IEDM , pp. 827-830
    • Scott, G.1
  • 4
    • 0036932273 scopus 로고    scopus 로고
    • Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical Performance
    • Bianchi, et al, "Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical Performance," 2002 IEEE IEDM, pp. 117-120.
    • (2002) IEEE IEDM , pp. 117-120
    • Bianchi1
  • 5
    • 25844444121 scopus 로고    scopus 로고
    • Proximity Effects and VLSI Design
    • T. R. Hook, J. Brown, X. Tian, "Proximity Effects and VLSI Design," ICICT '05, pp. 167-170.
    • ICICT '05 , pp. 167-170
    • Hook, T.R.1    Brown, J.2    Tian, X.3
  • 6
    • 1642298162 scopus 로고    scopus 로고
    • Impact of Reducing STI-Induced Stress on Layout Dependence of MOSFET Characteristics
    • March
    • M. Miyamoto, et al., "Impact of Reducing STI-Induced Stress on Layout Dependence of MOSFET Characteristics," IEEE Trans. Elec. Dev., March 2004, pp.440-443.
    • (2004) IEEE Trans. Elec. Dev , pp. 440-443
    • Miyamoto, M.1
  • 7
    • 28744448759 scopus 로고    scopus 로고
    • CMOS Vt-Control Improvement through Implant Lateral Scatter Elimination
    • I. Polishchuk, et al., "CMOS Vt-Control Improvement through Implant Lateral Scatter Elimination," ISSM '05, pp.193-196.
    • ISSM '05 , pp. 193-196
    • Polishchuk, I.1
  • 8
    • 0042411906 scopus 로고    scopus 로고
    • Lateral Ion Implant Straggle and Mask Proximity Effect
    • Sept
    • T. B. Hook, et al., "Lateral Ion Implant Straggle and Mask Proximity Effect," IEEE Trans. Elec. Dev. Sept 2003, pp.1946-1951.
    • (2003) IEEE Trans. Elec. Dev , pp. 1946-1951
    • Hook, T.B.1
  • 9
    • 33846280931 scopus 로고    scopus 로고
    • Modeling Well Edge Proximity Effect on Highly-Scaled MOSFETs
    • Y. M. Sheu, et al, "Modeling Well Edge Proximity Effect on Highly-Scaled MOSFETs," 2005 IEEE CICC, pp. 831-834.
    • (2005) IEEE CICC , pp. 831-834
    • Sheu, Y.M.1
  • 10
    • 39049111059 scopus 로고    scopus 로고
    • S. Wolf, Silicon Processing for the VLSI Era - 2 - Process Integration, pp.389.
    • S. Wolf, Silicon Processing for the VLSI Era - Vol. 2 - Process Integration, pp.389.
  • 11
    • 23944498418 scopus 로고    scopus 로고
    • Evaluation of the Impact of Layout on Device and Analog Circuit Performance With Lateral Asymmetric Channel MOSFETs
    • July
    • D. V Kumar, et al., "Evaluation of the Impact of Layout on Device and Analog Circuit Performance With Lateral Asymmetric Channel MOSFETs," IEEE Trans. Elec. Dev., July 2005, pp.1603-1609.
    • (2005) IEEE Trans. Elec. Dev , pp. 1603-1609
    • Kumar, D.V.1
  • 12
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    • available at
    • BSIM 4.5.0 Manual, available at http://www-device.eecs.berkeley.edu/ ~bsim3/bsim4.html
    • BSIM 4.5.0 Manual


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.