SCOPUS 정보 검색 플랫폼

IEEE Electron Device Letters

Volumn 21, Issue 2, 2000, Pages 85-87

Dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 μm technologies

(3) Hook, Terence B a Biesemans, Serge a Slinkman, James a

a IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; RANDOM ACCESS STORAGE; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

CHANNEL LENGTH; CHANNEL WIDTH; SEMICONDUCTOR DEVICE MECHANICAL FACTORS; SEMICONDUCTOR PROCESS MODELING;

FIELD EFFECT TRANSISTORS;

EID: 0034140813 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.821680 Document Type: Article

Times cited : (12)

References (10)

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