Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 281-285

  Felch, S B ^a   Collart, E ^a   Parihar, V ^a   Thirupapuliyur, S ^a   Schreutelkamp, R ^a   Pawlak, B J ^b   Hoffmann, T ^c   Severi, S ^c   Eyben, P ^c   Vandervorst, W ^c   Noda, T ^c,d  

^a APPLIED MATERIALS INC   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

^c IMEC   (Belgium)

^d PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COIMPLANTATION; CONVENTIONAL SPIKE ANNEALING; DOPANT ACTIVATION; ULTRASHALLOW JUNCTIONS;

ACTIVATION ENERGY; ION IMPLANTATION; LASER APPLICATIONS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 38849192577     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2831490     Document Type: Article

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