Theoretical study of the initial oxidation processes on the Si(0 0 1) surface

Surface Science

Volumn 602, Issue 3, 2008, Pages 768-777

  Takahashi, N ^a   Nakamura, Y ^a,b   Nara, J ^a   Tateyama, Y ^a   Uda, T ^b,c   Ohno, T ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c ADVANCESOFT CORPORATION   (Japan)

Author keywords

Backbond oxidation; Barrierless reaction; FP MM hybrid method; Molecular dynamics; Potential energy surface; Si(0 0 1) surface; Steering motion; Subsurface layer

Indexed keywords

COMPUTER SIMULATION; MOLECULAR DYNAMICS; OXIDATION; OXYGEN; POTENTIAL ENERGY;

MM HYBRID METHOD; OXIDATION PROCESSES; STEERING MOTION;

SILICON;

EID: 38749130068     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.12.004     Document Type: Article

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