Dielectric degradation of Cu/SiO2/Si structure during thermal annealing

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 990-994

  Chiou, Jung Chao ^a   Wang, Hong I ^a   Chen, Mao Chieh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; COPPER; DEGRADATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); IONS; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS; THERMAL STRESS; TITANIUM COMPOUNDS;

COPPER SILICA SILICON STRUCTURE; DIELECTRIC DEGRADATION; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR CAPACITOR; RAPID THERMAL ANNEALING;

MOS DEVICES;

EID: 0030106962     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836570     Document Type: Article

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