Direct observation of substitutional Fe atoms in Si and SOI wafers at 1273 K

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 605-608

  Yoshida, Yutaka ^a   Ogawa, Shigeru ^a   Arikawa, Kazuhiro ^a  

^a SHIZUOKA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Fe diffusion in Si; Gettering technique; M ssbauer spectroscopy; Substitutional Fe

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRON ENERGY LEVELS; HIGH TEMPERATURE EFFECTS; IRON; ISOTOPES; MOSSBAUER SPECTROSCOPY; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SOLUBILITY; SUBSTITUTION REACTIONS; TEMPERATURE MEASUREMENT; THERMAL DIFFUSION IN SOLIDS; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

DEPTH PROFILE; GETTERING TECHNIQUES; ROOM TEMPERATURE;

SILICON WAFERS;

EID: 0346504192     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.125     Document Type: Conference Paper

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