Ab initio total-energy calculations for iron-acceptor pairs in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 16, 1997, Pages 10508-10514

  Overhof, H ^a   Weihrich, H ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000217178     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.10508     Document Type: Article

References (36)

1. K. Graff, in Metal Impurities in Silicon-Device Fabrication, edited by H. K. V. Lotsch, Springer Series in Materials Science Vol. 24 (Springer, Heidelberg, 1995).
2. K. Graff and H. Pieper, J. Electrochem. Soc. 128, 669 (1981).
3. L.C. Kimmerling, in Defects in Semiconductors, edited by J. Narajan and T.Y. Tan (Elsevier, New York, 1981), p. 85.
4. H. Takahashi, M. Suezawa and K. Sumino, Mater. Sci. Forum 143-147, 1257 (1994).
5. A. Chantre and D. Bois, Phys. Rev. B 31, 7979 (1985).
6. A. Chantre and L.C. Kimmerling, Mater. Sci. Forum 10-12, 387 (1986).
7. W. Gehlhoff, K.H. Segsa and C. Meyer, Phys. Status Solidi B 105, K91 (1981).
8. W. Gehlhoff and K.H. Segsa, Phys. Status Solidi B 115, 443 (1983).
9. W. Gehlhoff, K. Irmscher, and J. Kreissl, in New Developements in Semiconductor Physics, edited by G.G. Ferenczi and F. Beleznoy, Lecture Notes in Physics Vol. 301 (Springer-Verlag, Heidelberg, 1987), p. 262.
10. W. Gehlhoff, P. Emanuelsson, P. Omling and H.G. Grimmeiss, Phys. Rev. B 41, 8560 (1990).
11. S. Ghatnekar-Nilsson, M. Kleverman, P. Emanuelsson and H.G. Grimmeiss, Mater. Sci. Forum 143-147, 171 (1994).
12. S. Greulich-Weber, A. Görger, J.-M.Spaeth and H. Overhof, Appl. Phys. A 53, 147 (1991).
13. K. Irmscher, T. Kind and W. Gehlhoff, Phys. Rev. B 49, 7964 (1994).
14. L.V.C. Assali and J.R. Leite, Mater. Sci. Forum 10-12, 55 (1986).
15. L.V.C. Assali and J.R. Leite, Phys. Rev. B 36, 1296 (1987).
16. L.V.C. Assali and J.R. Leite, Mater. Sci. Forum 38-41, 409 (1989).
17. L.V.C. Assali and J.R. Leite, Mater. Sci. Forum 83-87, 143 (1992).
18. H. Weihrich and H. Overhof (unpublished).
19. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
20. W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965).
21. U. von Barth and L. Hedin, J. Phys. C 5, 1629 (1972).
22. D. Ceperley, Phys. Rev. B 18, 3126 (1978).
23. D.M. Ceperley and B.J. Alder, Phys. Rev. Lett. 45, 566 (1980).
24. O. Gunnarsson, O. Jepsen and O.K. Andersen, Phys. Rev. B 27, 7144 (1983).
25. F. Beeler, O.K. Andersen and M. Scheffler, Phys. Rev. Lett. 55, 1498 (1985).
26. F. Beeler, O.K. Andersen and M. Scheffler, Phys. Rev. B 41, 1603 (1990).
27. F. Beeler and M. Scheffler, Mater. Sci. Forum 38-41, 257 (1989).
28. H. Weihrich and H. Overhof, Phys. Rev. B 54, 4680 (1996).
29. C.O. Rodriguez, S. Brand and M. Jaros, J. Phys. C 13, L333 (1980).
30. M. Suezawa and M. Sumino, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered (Ref. 7), p. 233.
31. H. Nakashima, T. Sadoh and T. Tsurushima, Phys. Rev. B 49, 16 983 (1994).
32. H. Nakashima, T. Sadoh and T. Tsurushima, Mater. Sci. Forum 143-147, 1191 (1994).
33. L.C. Kimmerling, M.T. Asom, J.L. Benton, P.J. Drevinski and C.E. Caefer, Mater. Sci. Forum 38-41, 141 (1989).
34. S. Zhao, L.V.C. Assali and L.C. Kimmerling, Mater. Sci. Forum 196-201, 1333 (1995).
35. H. Overhof and H. Weihrich, Mater. Sci. Forum 196-201, 1357 (1995).
36. S.D. Brotherton, P. Bradley and A. Gill, J. Appl. Phys. 57, 1783 (1985).