In situ observation of substitutional and interstitial Fe atoms in Si after GeV-implantation: An in-beam Mössbauer study

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 69-72

  Yoshida, Y ^a   Kobayashi, Y ^b   Hayakawa, K ^a   Yukihira, K ^a   Yoshida, A ^b   Ueno, H ^b   Shimura, F ^a   Ambe, F ^b  

^a SHIZUOKA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b RIKEN   (Japan)

Author keywords

Diffusion; M ssbauer spectroscopy; Substitutional and interstitial Fe in Si

Indexed keywords

CHARGE CARRIERS; DIFFUSION; MOSSBAUER SPECTROSCOPY; RADIOISOTOPES; SILICON;

CHARGE STATES; SI MATRIX; SUBSTITUTIONAL AND INTERSTITIAL FE IN SI;

IRON;

EID: 33645227126     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.019     Document Type: Conference Paper

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