Diffusion Barrier Characteristics of TaSiN for Pt/TaSiN/Poly-Si Electrode Structure of Semiconductor Memory Device

Journal of the Electrochemical Society

Volumn 148, Issue 11, 2001, Pages

  Lee, Eung Min ^a   Shin, Woong Chul ^a   Choi, Young Sim ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0442324714     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1405520     Document Type: Article

References (9)

1. S. G. Yoon, J. C. Lee, and A. Safari, J. Appl. Phys., 76, 2999 (1994).
2. S. G. Yoon and A. Safari, Thin Solid Films, 254, 211 (1995).
3. W. J. Lee, S. G. Yoon, and H. G. Kim, J. Appl. Phys., 80, 5891 (1996).
4. S. Yamanichi, P-Y. Lesaicherre, H. Yamaguchi, K. Takemura, S. Sone, H. Yabuta, K. Sato, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hayashi, Y. Kato, Y. Miyasaka, M. Yoshida, and H. Ono, Tech. Dig. Int. Electron Devices Meet., 95, 119 (1995).
5. A. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata, and H. Abe, Tech. Dig. Int. Electron Devices Meet., 95, 115 (1995).
6. P. Y. Lesaicherre, H. Yamaguchi, Y. Miyasaka, H. Watanabe, H. Ono, and M. Yoshida, Integr. Ferroelectr., 8, 201 (1995).
7. H. J. Cho, H. Hori, C. S. Hwang, J. W. Kim, C. S. Kang, B. T. Lee, S. I. Lee, Y. B. Koh and M. Y. Lee, Jpn. J. Appl. Phys., Part 1, 36, 1722 (1997).
8. D. K. Schroder, Semiconductor Material and Device Characterization, p. 114, John Wiley & Sons, Inc., New York (1990).
9. E. S. Choi, J. S. Hwang, and S. G. Yoon, J. Electrochem. Soc., 147, 2340 (2000).